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Publications in Math-Net.Ru
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Terahertz quantum cascade laser in a quantizing magnetic field
Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 433–438
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Tuning the radiation frequency of a mid-IR quantum cascade laser
Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 13–15
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THz quantum cascade lasers in magnetic fields
Fizika i Tekhnika Poluprovodnikov, 58:4 (2024), 196–201
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Multi-phonon relaxation of the 1$s(T_2)$ triplet of neutral magnesium donors in silicon
Fizika i Tekhnika Poluprovodnikov, 58:1 (2024), 7–13
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Double magnesium donors as a potential active medium in the terahertz range
Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 455–460
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Optical excitation of spin-triplet states of two-electron donors in silicon
Fizika i Tekhnika Poluprovodnikov, 57:5 (2023), 327–331
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The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors
Kvantovaya Elektronika, 53:5 (2023), 401–405
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Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition
Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022), 139–145
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Terahertz stimulated emission under the optical resonant excitation of germanium doped with shallow donors
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 729–732
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Relaxation of the excited states of arsenic in strained germanium
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1145–1149
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Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821
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Relaxation times and population inversion of excited states of arsenic donors in germanium
Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019), 677–682
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Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1285–1288
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Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1263–1266
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Low-temperature intracenter relaxation times of shallow donors in germanium
Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017), 555–560
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Polarization of the induced THz emission of donors in silicon
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1701–1705
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On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1629–1633
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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483
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Terahertz emission at impurity electrical breakdown in Si(Li)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 18–23
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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 15–20
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Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon
Kvantovaya Elektronika, 45:2 (2015), 113–120
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Terahertz intracenter photoluminescence of silicon with lithium at interband excitation
Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 876–880
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On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon
Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1044–1049
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Shallow-donor lasers in uniaxially stressed silicon
Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 199–205
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Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011), 24–30
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