Kozlovsky Vitaly V

Publications in Math-Net.Ru

1. Effect of irradiation temperature on the carrier removal rate in GaN
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
2. Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes
   
   Fizika Tverdogo Tela, 66:12 (2024),  2193–2196
3. Creating NV$^-$-defects in silicon carbide 6$H$–SiC by irradiation with high-energy electrons
   
   Fizika Tverdogo Tela, 66:4 (2024),  537–541
4. Local diagnostics of spin defects in irradiated SiC Schottky diodes
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024),  367–373
5. Temperature dependence of the carrier removal rate in 4H-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  482–484
6. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
7. Persistent relaxation processes in proton-irradiated 4H-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  743–750
8. Investigation of the Cr$^{3+}$ impurity luminescence in proton-irradiated $\beta$-Ga$_2$O$_3$
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  573–576
9. Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  53–57
10. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation
    
    Fizika Tverdogo Tela, 64:12 (2022),  1915
11. Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range
    
    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  809–813
12. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
13. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
14. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
15. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
16. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994
17. Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  555–561
18. Radiation-induced damage of silicon-carbide diodes by high-energy particles
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1651–1655
19. Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1532–1534
20. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
21. Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332
22. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
23. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
24. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67
25. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
26. Radiation hardness of $n$-GaN Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
27. Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped $p$-4H-SiC (CVD)
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1198–1201
28. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67
29. Vacancy-donor pairs and their formation in irradiated $n$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1473–1478
30. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343
31. Comparison of the radiation hardness of silicon and silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1329–1331
32. Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1033–1036
33. Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014),  45–49
34. Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  473–481
35. Annealing of radiation-compensated silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  90–94
36. Conductivity compensation in $p$-6H-SiC in irradiation with 8-MeV protons
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1188–1190
37. Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  145–148
38. Electron irradiation controlled profile of recombination center concentration in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  105–110
39. Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  706–712
40. DIFFUSION OF THE SUBSTITUTION IMPURITY IN THE ION-IRRADIATED CRYSTAL
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2175–2178