Rudenko Konstantin Vasil'evich

Publications in Math-Net.Ru

1. Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:12 (2025),  945–951
2. Low resistance state degradation during endurance measurements in HfO$_2$(8 нм)/HfO$_X$N$_Y$-based structures
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  451–454
3. Atomic layer deposition of thin films onto 3$D$ nanostructures: the effect of wall tilt angle and aspect ratio of trenches
   
   Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1573–1580
4. Analytical model for atomic-layer deposition of thin films on the walls of cylindrical holes with a relatively high aspect ratio
   
   Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1264–1272
5. Analytical model of atomic layer deposition of films on 3D structures with high aspect ratios
   
   Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  243–250
6. Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  643–649