Gorshkov A P

Publications in Math-Net.Ru

1. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
2. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
3. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
4. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
5. Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1421–1424
6. Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  651–655
7. Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  470
8. Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1447–1450
9. Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  563–568
10. Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1640–1643
11. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1411–1414
12. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  399–405
13. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
14. Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014),  175–180
15. Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn $\delta$ layer
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1617–1620
16. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1609–1612
17. Effect of He$^+$ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1542–1545
18. Influence of defect formation as a result of incorporation of a Mn $\delta$ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  194–197