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Publications in Math-Net.Ru
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Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1421–1424
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Electric-field behavior of the resonance features of the tunneling photocurrent component in InAs(QD)/GaAs heterostructures
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1006–1014
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Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655
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Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450
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Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures
Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1640–1643
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Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1411–1414
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Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 399–405
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Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148
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Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy
Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180
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Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots
Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1609–1612
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Effect of He$^+$ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures
Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1542–1545
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