Shashkin Ilya Sergeevich

Publications in Math-Net.Ru

1. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
2. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
3. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
4. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
5. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
6. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide
   
   Kvantovaya Elektronika, 53:1 (2023),  6–10
7. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
8. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
   
   Kvantovaya Elektronika, 52:9 (2022),  794–798
9. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
10. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
11. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
12. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
13. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
14. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
15. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
    
    Kvantovaya Elektronika, 50:8 (2020),  722–726
16. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis
    
    Kvantovaya Elektronika, 50:2 (2020),  147–152
17. Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1074–1079
18. Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
19. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498
20. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
21. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
22. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
23. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1108–1114
24. Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  10–16
25. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
    
    Kvantovaya Elektronika, 45:10 (2015),  879–883
26. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
27. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
28. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
29. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
30. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  705–709
31. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
32. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
33. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
34. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
35. High-order diffraction gratings for high-power semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
36. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
37. The temperature dependence of internal optical losses in semiconductor lasers ($\lambda$ = 900–920 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1411–1416
38. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
39. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
40. Temperature delocalization of charge carriers in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693