Shamakhov Viktor Valentinovich

Publications in Math-Net.Ru

1. Буферные структуры GaAs/Si, полученные методом газофазной эпитаксии из металлоорганических соединений
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  48–52
2. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
3. Study of the mask shape effect on the spatial distribution of GaAs layer growth rate in MOCVD selective area epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  452–457
4. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence
   
   Kvantovaya Elektronika, 53:5 (2023),  374–378
5. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses
   
   Kvantovaya Elektronika, 53:1 (2023),  1–5
6. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
7. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
8. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
9. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
   
   Kvantovaya Elektronika, 51:11 (2021),  987–991
10. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
    
    Kvantovaya Elektronika, 51:2 (2021),  129–132
11. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
12. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
13. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
14. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  661–665
15. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
16. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
17. Al$_x$Ga$_{1-x}$As/GaAs(100) hetermostructures with anomalously high carrier mobility
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1043–1049
18. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
19. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
20. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
21. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
22. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
23. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
24. Semiconductor lasers with internal wavelength selection
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
25. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
26. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
27. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
28. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
29. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
30. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
31. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
32. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250