Kapitonov Vladimir Anatol'evich

Publications in Math-Net.Ru

1. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
2. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
3. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
4. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture
   
   Kvantovaya Elektronika, 52:4 (2022),  340–342
5. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
6. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
7. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
8. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
9. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
10. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
11. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
12. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
13. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
14. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
15. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
16. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250