Veselov Dmitrii Aleksandrovich

Publications in Math-Net.Ru

1. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
2. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses
   
   Kvantovaya Elektronika, 52:12 (2022),  1152–1165
3. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures
   
   Kvantovaya Elektronika, 52:2 (2022),  174–178
4. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
   
   Kvantovaya Elektronika, 52:2 (2022),  171–173
5. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
   
   Kvantovaya Elektronika, 51:11 (2021),  987–991
6. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
   
   Kvantovaya Elektronika, 51:10 (2021),  909–911
7. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
   
   Kvantovaya Elektronika, 51:10 (2021),  905–908
8. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
   
   Kvantovaya Elektronika, 51:4 (2021),  283–286
9. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
   
   Kvantovaya Elektronika, 51:2 (2021),  133–136
10. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
    
    Kvantovaya Elektronika, 51:2 (2021),  129–132
11. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
    
    Kvantovaya Elektronika, 51:2 (2021),  124–128
12. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
13. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
    
    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
14. Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light
    
    Kvantovaya Elektronika, 50:9 (2020),  822–825
15. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
    
    Kvantovaya Elektronika, 50:8 (2020),  722–726
16. Study of multimode semiconductor lasers with buried mesas
    
    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
17. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  661–665
18. Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm
    
    Kvantovaya Elektronika, 49:5 (2019),  488–492
19. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm
    
    Kvantovaya Elektronika, 48:3 (2018),  197–200
20. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
21. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides
    
    Kvantovaya Elektronika, 47:3 (2017),  272–274
22. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
23. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
24. Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  10–16
25. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
    
    Kvantovaya Elektronika, 45:10 (2015),  879–883
26. Study of the absorption coefficient in layers of a semiconductor laser heterostructure
    
    Kvantovaya Elektronika, 45:7 (2015),  604–606
27. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers
    
    Kvantovaya Elektronika, 45:7 (2015),  597–600
28. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
29. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime
    
    Kvantovaya Elektronika, 44:11 (2014),  993–996
30. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
31. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233