Steinman Eduard Aleksandrovich

Publications in Math-Net.Ru

1. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
2. Physical properties of carbon films obtained by methane pyrolysis in an electric field
   
   Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  110–113
3. Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B
   
   Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1175–1179
4. Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals
   
   Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1017–1023
5. Features and mechanisms of growth of cubic silicon carbide films on silicon
   
   Fizika Tverdogo Tela, 54:4 (2012),  666–672
6. Luminescence induced in diamond by He$^+$ ion implantation into SiC/C composites with an inverse opal structure
   
   Fizika Tverdogo Tela, 54:3 (2012),  549–554
7. Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum
   
   Fizika Tverdogo Tela, 53:9 (2011),  1706–1712
8. Synthesis of a periodic SiC/C nanostructure
   
   Fizika Tverdogo Tela, 53:6 (2011),  1059–1063
9. Effect of copper on dislocation luminescence centers in silicon
   
   Fizika Tverdogo Tela, 53:2 (2011),  346–352
10. Magnetic properties of crystals of the molecular complex between fullerene C60 and an organic donor $9,9'$-trans-bis(telluraxanthenyl)
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 74:8 (2001),  462–465
11. Discrete spectrum of nonequilibrium dislocation structure in germanium
    
    Dokl. Akad. Nauk SSSR, 305:5 (1989),  1104–1106
12. Systematics of dislocation photoluminescence lines in silicon
    
    Fizika Tverdogo Tela, 30:10 (1988),  3177–3179
13. Shear stress-induced rearrangement of dislocation optical centers
    
    Fizika Tverdogo Tela, 29:3 (1987),  879–881
14. Quenching effect on photoluminescence dislocation spectrum in silicon
    
    Fizika Tverdogo Tela, 28:4 (1986),  1172–1176
15. Line polarization of dislocation luminescence in silicon $\mathrm{NaI}$
    
    Fizika Tverdogo Tela, 28:4 (1986),  1015–1019
16. Dislocation photoluminescence spectra at annealing of deformed silicon samples
    
    Fizika Tverdogo Tela, 26:6 (1984),  1772–1776
17. Dislocation luminescence in $\mathrm{Ge}$
    
    Fizika Tverdogo Tela, 26:3 (1984),  677–683