Orlov Lev Konstantinovich

Publications in Math-Net.Ru

1. High-frequency properties of a two-dimensional quantum superlattice in a strong homogeneous electric field
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  78–88
2. Features of electron transport in two-dimensional quantum superlattices with the non-associative dispersion law
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  241–250
3. Microcrystalline structure and light-emitting properties of 3$C$–SiC island films grown on the Si(100) surface
   
   Fizika Tverdogo Tela, 61:7 (2019),  1322–1330
4. Features of the initial stage of the heteroepitaxy of silicon layers on germanium when grown from silicon hydrides
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  995–1005
5. Electric-field behavior of the resonance features of the tunneling photocurrent component in InAs(QD)/GaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1006–1014
6. Effect of atomic silicon and germanium beams on the growth kinetics of Si$_{1-x}$Ge$_{x}$ layers in Si–GeH$_{4}$ molecular beam epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  427–437
7. Features of electron transport in relaxed Si/Si$_{1-x}$Ge$_x$ transistor heterostructures with a high doping level
   
   Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  970–982
8. Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions
   
   Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  852–861
9. Features and mechanisms of growth of cubic silicon carbide films on silicon
   
   Fizika Tverdogo Tela, 54:4 (2012),  666–672
10. Kinetics of disilane molecule decomposition on the growth surface of silicon in vacuum gas-phase epitaxy reactors
    
    Zhurnal Tekhnicheskoi Fiziki, 82:11 (2012),  83–92
11. Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum
    
    Fizika Tverdogo Tela, 53:9 (2011),  1706–1712
12. Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  566–575
13. Self-formation of quantum wire networks in porous InGaAs/GaAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:9 (2002),  584–1
14. Energy diagrams and electrical characteristics of stressed-layer $\mathrm{Ge}$–$\mathrm{Ge}_{1-x}\mathrm{Si}_{x}$ superlattices
    
    Fizika Tverdogo Tela, 32:7 (1990),  1933–1940
15. Пьезомодуляционный эффект в структурах с квантовыми ямами
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  987–992
16. Raman light scattering from local vibrations in $\mathrm{Ge}_{1-x}\mathrm{Si}_{x}$ solid solutions
    
    Fizika Tverdogo Tela, 31:11 (1989),  292–297
17. CHARACTERISTICS OF GE-GE1-XSEX STRESS SUPERLATTICES WITH SELECTIVELY ALLOYED LAYERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:21 (1989),  77–81
18. Фотовольтаический эффект в структурах, содержащих сверхрешетки Ge$-$Ge$_{1-x}\text{Si}_{x}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:11 (1988),  1994–2000
19. Spectra of Light Electroreflection from the Surface of Ge$-$Ge$_{1-x}$Si$_{x}$ Superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1962–1967
20. Light Absorption in Quantum Semiconductor Layers and Superlattices in the Presence of High Electric Fields
    
    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  710–717
21. Transformation of electromagnetic signals of wave submilimetric range in the $Ge-Ge_{1-x}\,Si_{x}$ superlattice
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  734–736
22. Spectra of Light Electroreflection from Ge$_{1-x_{1}}$Si$_{x_{1}}{-}$Ge$_{1-x_{2}}$Si$_{x_{2}}$ Periodic Structures with Hyperfine Layers
    
    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  118–122
23. Nonlinear Resonant Peculiarities of Superlattice Electric Characteristics in Conditions of Strong Intersubband Electron Tunneling
    
    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1877–1881
24. Nonlinear High-Frequency Properties of Dimensionally Quantized Semiconductor Layers
    
    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  376–378