Rastegaeva Marina Gennad'evna

Publications in Math-Net.Ru

1. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
2. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
3. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
4. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
   
   Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
5. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
   
   Kvantovaya Elektronika, 44:10 (2014),  907–911
6. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
7. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
8. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
9. High-order diffraction gratings for high-power semiconductor lasers
   
   Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
10. A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1266–1273
11. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644