RUS  ENG
Full version
PEOPLE

Lyutetskiy Andrei Vladimirovich

Publications in Math-Net.Ru

  1. Single-mode quantum-cascade lasers with variable etching depth of grating slits

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  23–28
  2. Tuning the radiation frequency of a mid-IR quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  13–15
  3. Tunable quantum cascade laser for methane concentration measurement

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  66–70
  4. Single-mode lasing on radial modes in ring cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  52–56
  5. The effect of the pump pulse duration and duty cycle on the power characteristics of quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  54–58
  6. High-power tunable quantum-cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  65–68
  7. Quantum-cascade lasers based on an active region with low sensitivity to thickness fluctuations

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  18–21
  8. Tuning the emission frequency of U-shaped mid-infrared quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  23–27
  9. InGaAs/AlInAs/InP quantum-cascade lasers with reflective and antireflective optical coatings

    Kvantovaya Elektronika, 54:2 (2024),  100–103
  10. Generation of random sequences by switching transverse modes in a quantum cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  35–38
  11. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers

    Kvantovaya Elektronika, 53:8 (2023),  641–644
  12. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 – 5 μm emission wavelength

    Kvantovaya Elektronika, 53:5 (2023),  370–373
  13. Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  908–914
  14. Study of the spatial characteristics of emission of surface-emitting ring quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  601–606
  15. Features of single-mode emission in 7.5–8.0 $\mu$m range quantum-cascade lasers with a short cavity length

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  7–10
  16. High-power laser diodes based on InGaAs(Š)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
  17. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

    Kvantovaya Elektronika, 52:10 (2022),  889–894
  18. Quantum-cascade laser with radiation output through a textured layer

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
  19. Surface emitting quantum-cascade ring laser

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
  20. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
  21. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm

    Kvantovaya Elektronika, 51:10 (2021),  909–911
  22. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

    Kvantovaya Elektronika, 51:10 (2021),  905–908
  23. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides

    Kvantovaya Elektronika, 51:4 (2021),  283–286
  24. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide

    Kvantovaya Elektronika, 51:2 (2021),  133–136
  25. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range

    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
  26. Spectral characteristics of half-ring quantum-cascade lasers

    Optics and Spectroscopy, 128:8 (2020),  1165–1170
  27. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
  28. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
  29. Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  35–38
  30. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
  31. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm

    Kvantovaya Elektronika, 50:11 (2020),  989–994
  32. 10-W 4.6-μm quantum cascade lasers

    Kvantovaya Elektronika, 50:8 (2020),  720–721
  33. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
  34. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
  35. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
  36. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
  37. High-coupling distributed feedback lasers for the 1.55 μm spectral region

    Kvantovaya Elektronika, 49:9 (2019),  801–803
  38. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m

    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
  39. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
  40. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range

    Optics and Spectroscopy, 125:3 (2018),  387–390
  41. Ridge waveguide structure for lattice-matched quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1499–1502
  42. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
  43. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
  44. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

    Kvantovaya Elektronika, 48:3 (2018),  197–200
  45. Polarization effects in quantum-well In$_{28}$Ga$_{72}$As/GaAs heterolasers

    Fizika Tverdogo Tela, 59:9 (2017),  1684–1690
  46. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

    Kvantovaya Elektronika, 47:3 (2017),  272–274
  47. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
  48. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
  49. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  50. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
  51. Properties of AlN films deposited by reactive ion-plasma sputtering

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
  52. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

    Kvantovaya Elektronika, 45:10 (2015),  879–883
  53. Study of the absorption coefficient in layers of a semiconductor laser heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  604–606
  54. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

    Kvantovaya Elektronika, 45:7 (2015),  597–600
  55. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
  56. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
  57. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
  58. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

    Kvantovaya Elektronika, 44:11 (2014),  993–996
  59. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911
  60. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
  61. Acoustoelectron interaction in quantum laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  137–142
  62. Semiconductor lasers with internal wavelength selection

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
  63. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
  64. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
  65. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
  66. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
  67. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
  68. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
  69. Temperature delocalization of charge carriers in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
  70. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
  71. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250
  72. Features of mode locking in laser with quantum well in broad waveguide layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
  73. Gradient tuning of the direction of emission from InGaAsP/InP heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  48–54
  74. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  22–30

  75. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis

    UFN, 194:1 (2024),  98–105

© Steklov Math. Inst. of RAS, 2026