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Pikhtin Nikita Alexandrovich

Publications in Math-Net.Ru

  1. High-speed current switches based on AlGaAs/GaAs heterostructure thyristors with a thick $p$-base (8 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  629–634
  2. InAs/InAsSbP bridge photodiodes: features of the fabrication technology

    Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  505–509
  3. Study of the mask shape effect on the spatial distribution of GaAs layer growth rate in MOCVD selective area epitaxy

    Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  452–457
  4. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
  5. Resonators of IR lasers based on two-dimensional photonic crystals for organization of surface output of radiation

    Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  113–121
  6. Single-mode quantum-cascade lasers with variable etching depth of grating slits

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  23–28
  7. Tuning the radiation frequency of a mid-IR quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  13–15
  8. Tunable quantum cascade laser for methane concentration measurement

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  66–70
  9. Output losses in semiconductor laser resonator formed by a photonic crystal

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  36–40
  10. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
  11. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
  12. Single-mode lasing on radial modes in ring cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  52–56
  13. Compact high-power nanosecond-duration laser pulse sources (940 nm) based on “semiconductor laser – thyristor switch” vertical stacks

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  7–10
  14. The effect of the pump pulse duration and duty cycle on the power characteristics of quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  54–58
  15. Analysis of saturation mechanisms of high-power pulsed semiconductor lasers based on the InGaAsP/InP heterostructure emitting at a wavelength of 1.55 μm

    Kvantovaya Elektronika, 55:3 (2025),  141–145
  16. Multimode semiconductor lasers with surface distributed feedback

    Optics and Spectroscopy, 132:11 (2024),  1131–1133
  17. A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode

    Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  703–708
  18. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
  19. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
  20. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
  21. Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  42–48
  22. High-power tunable quantum-cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  65–68
  23. Quantum-cascade lasers based on an active region with low sensitivity to thickness fluctuations

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  18–21
  24. Tuning the emission frequency of U-shaped mid-infrared quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  23–27
  25. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
  26. Temperature dependence of the output optical power of semiconductor lasers–thyristors based on AlGaAs/GaAs/InGaAs heterostructures

    Kvantovaya Elektronika, 54:4 (2024),  218–223
  27. InGaAs/AlInAs/InP quantum-cascade lasers with reflective and antireflective optical coatings

    Kvantovaya Elektronika, 54:2 (2024),  100–103
  28. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
  29. Switching (turn-on) dynamics of low-voltage InP homothyristors

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  295–300
  30. Generation of random sequences by switching transverse modes in a quantum cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  35–38
  31. Low-voltage InP heterostyristors for 50–150 ns current pulses generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
  32. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers

    Kvantovaya Elektronika, 53:8 (2023),  641–644
  33. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence

    Kvantovaya Elektronika, 53:5 (2023),  374–378
  34. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 – 5 μm emission wavelength

    Kvantovaya Elektronika, 53:5 (2023),  370–373
  35. Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents

    Kvantovaya Elektronika, 53:1 (2023),  17–24
  36. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

    Kvantovaya Elektronika, 53:1 (2023),  11–16
  37. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide

    Kvantovaya Elektronika, 53:1 (2023),  6–10
  38. Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses

    Kvantovaya Elektronika, 53:1 (2023),  1–5
  39. Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  908–914
  40. Study of the spatial characteristics of emission of surface-emitting ring quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  601–606
  41. Features of single-mode emission in 7.5–8.0 $\mu$m range quantum-cascade lasers with a short cavity length

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  7–10
  42. High-power laser diodes based on InGaAs(Š)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
  43. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

    Kvantovaya Elektronika, 52:10 (2022),  889–894
  44. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)

    Kvantovaya Elektronika, 52:9 (2022),  794–798
  45. Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model

    Kvantovaya Elektronika, 52:4 (2022),  343–350
  46. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

    Kvantovaya Elektronika, 52:4 (2022),  340–342
  47. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

    Kvantovaya Elektronika, 52:2 (2022),  174–178
  48. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

    Kvantovaya Elektronika, 52:2 (2022),  171–173
  49. Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1229–1235
  50. Quantum-cascade laser with radiation output through a textured layer

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
  51. Surface emitting quantum-cascade ring laser

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
  52. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
  53. Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  460–465
  54. Isotype $n$-AlGaAs/$n$-GaAs heterostructures optimized for efficient interband radiative recombination under current pumping

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  427–433
  55. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
  56. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
  57. Spectroscopic studies of integrated GaAs/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
  58. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
  59. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
  60. Optical absorption in a waveguide based on an n-type AlGaAs heterostructure

    Kvantovaya Elektronika, 51:11 (2021),  987–991
  61. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm

    Kvantovaya Elektronika, 51:10 (2021),  912–914
  62. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm

    Kvantovaya Elektronika, 51:10 (2021),  909–911
  63. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

    Kvantovaya Elektronika, 51:10 (2021),  905–908
  64. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides

    Kvantovaya Elektronika, 51:4 (2021),  283–286
  65. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide

    Kvantovaya Elektronika, 51:2 (2021),  133–136
  66. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

    Kvantovaya Elektronika, 51:2 (2021),  129–132
  67. Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures

    Kvantovaya Elektronika, 51:2 (2021),  124–128
  68. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range

    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
  69. Spectral characteristics of half-ring quantum-cascade lasers

    Optics and Spectroscopy, 128:8 (2020),  1165–1170
  70. Study of the spectra of arched-cavity quantum-cascade lasers

    Optics and Spectroscopy, 128:6 (2020),  696–700
  71. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
  72. Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  484–489
  73. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
  74. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
  75. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
  76. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
  77. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
  78. Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  35–38
  79. Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  8–11
  80. Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  16–19
  81. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
  82. Triple integrated laser–thyristor

    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
  83. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm

    Kvantovaya Elektronika, 50:11 (2020),  989–994
  84. Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light

    Kvantovaya Elektronika, 50:9 (2020),  822–825
  85. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

    Kvantovaya Elektronika, 50:8 (2020),  722–726
  86. 10-W 4.6-μm quantum cascade lasers

    Kvantovaya Elektronika, 50:8 (2020),  720–721
  87. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

    Kvantovaya Elektronika, 50:2 (2020),  147–152
  88. High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region

    Kvantovaya Elektronika, 50:2 (2020),  141–142
  89. Lasing of a quantum-cascade laser with a thin upper cladding

    Optics and Spectroscopy, 127:2 (2019),  278–282
  90. On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1584–1592
  91. Ńlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  839–843
  92. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
  93. Spectral shift of quantum-cascade laser emission under the action of control voltage

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019),  21–23
  94. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
  95. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
  96. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
  97. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
  98. Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  38–41
  99. Study of multimode semiconductor lasers with buried mesas

    Kvantovaya Elektronika, 49:12 (2019),  1172–1174
  100. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
  101. Double integrated laser-thyristor

    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
  102. High-coupling distributed feedback lasers for the 1.55 μm spectral region

    Kvantovaya Elektronika, 49:9 (2019),  801–803
  103. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers

    Kvantovaya Elektronika, 49:7 (2019),  661–665
  104. Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500–1600 nm

    Kvantovaya Elektronika, 49:5 (2019),  488–492
  105. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m

    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
  106. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
  107. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range

    Optics and Spectroscopy, 125:3 (2018),  387–390
  108. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498
  109. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
  110. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
  111. Numerical simulation of the current dependence of emission spectra of high-power pulsed lasers based on separate-confinement double heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  46–52
  112. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

    Kvantovaya Elektronika, 48:3 (2018),  197–200
  113. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
  114. A laser unit for photodynamic therapy and robot-assisted microsurgery in dentistry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:11 (2017),  12–19
  115. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
  116. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

    Kvantovaya Elektronika, 47:3 (2017),  272–274
  117. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
  118. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
  119. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
  120. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  834–838
  121. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
  122. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

    Kvantovaya Elektronika, 46:9 (2016),  777–781
  123. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-$\mu$m under current pumping

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1574–1577
  124. Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1553–1557
  125. Properties of AlN films deposited by reactive ion-plasma sputtering

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
  126. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1108–1114
  127. Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  10–16
  128. Integrated high-order surface diffraction gratings for diode lasers

    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
  129. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

    Kvantovaya Elektronika, 45:10 (2015),  879–883
  130. Study of the absorption coefficient in layers of a semiconductor laser heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  604–606
  131. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

    Kvantovaya Elektronika, 45:7 (2015),  597–600
  132. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
  133. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
  134. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
  135. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  705–709
  136. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
  137. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

    Kvantovaya Elektronika, 44:11 (2014),  993–996
  138. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911
  139. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
  140. Semiconductor lasers with internal wavelength selection

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
  141. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:8 (2013),  9–16
  142. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
  143. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
  144. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
  145. High-order diffraction gratings for high-power semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
  146. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438
  147. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
  148. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
  149. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  682–687
  150. Analysis of threshold conditions for generation of a closed mode in a Fabry–Perot semiconductor laser

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  672–676
  151. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
  152. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
  153. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
  154. The temperature dependence of internal optical losses in semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1411–1416
  155. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
  156. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
  157. Temperature delocalization of charge carriers in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
  158. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
  159. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250
  160. Features of mode locking in laser with quantum well in broad waveguide layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
  161. Giant reversible deformations in a shape-memory composite material

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:7 (2010),  75–81
  162. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  22–30

  163. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis

    UFN, 194:1 (2024),  98–105

© Steklov Math. Inst. of RAS, 2026