Leshko Andrei Yur'evich

Publications in Math-Net.Ru

1. Multimode semiconductor lasers with surface distributed feedback
   
   Optics and Spectroscopy, 132:11 (2024),  1131–1133
2. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
3. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
4. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
5. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
6. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
7. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
8. Integrated high-order surface diffraction gratings for diode lasers
   
   Kvantovaya Elektronika, 45:12 (2015),  1091–1097
9. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
10. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating
    
    Kvantovaya Elektronika, 44:10 (2014),  907–911
11. Semiconductor lasers with internal wavelength selection
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
12. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:8 (2013),  9–16
13. High-order diffraction gratings for high-power semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
14. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438
15. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  682–687
16. Analysis of threshold conditions for generation of a closed mode in a Fabry–Perot semiconductor laser
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  672–676
17. Features of mode locking in laser with quantum well in broad waveguide layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36