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Zolotarev Vasilii Vladimirovich

Publications in Math-Net.Ru

  1. Resonators of IR lasers based on two-dimensional photonic crystals for organization of surface output of radiation

    Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  113–121
  2. Output losses in semiconductor laser resonator formed by a photonic crystal

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  36–40
  3. Multimode semiconductor lasers with surface distributed feedback

    Optics and Spectroscopy, 132:11 (2024),  1131–1133
  4. Low-voltage InP heterostyristors for 50–150 ns current pulses generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
  5. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

    Kvantovaya Elektronika, 53:1 (2023),  11–16
  6. High-power laser diodes based on InGaAs(Ð)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
  7. Lateral waveguide mode selection for the development of single-mode ridge lasers with a distributed Bragg mirror

    Kvantovaya Elektronika, 52:10 (2022),  889–894
  8. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

    Kvantovaya Elektronika, 52:2 (2022),  171–173
  9. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
  10. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
  11. All-electric laser beam control based on a quantum-confined heterostructure with an integrated distributed Bragg grating

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1491–1498
  12. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
  13. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  834–838
  14. Properties of AlN films deposited by reactive ion-plasma sputtering

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
  15. Integrated high-order surface diffraction gratings for diode lasers

    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
  16. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
  17. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
  18. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  705–709
  19. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911
  20. Semiconductor lasers with internal wavelength selection

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
  21. High-order diffraction gratings for high-power semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257


© Steklov Math. Inst. of RAS, 2026