Sotnikov Ilya Petrovich

Publications in Math-Net.Ru

1. Self-catalytic growth of GaInP nanostructures on silicon substrates from vapor phase: choice of source composition and catalytic droplets
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  265–269
2. Ferroelectric properties of (Al,Ga)InP$_2$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  130–135
3. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
4. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
5. Features of InP on Si nanowire growth
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  530–533
6. Effect of nitrogen plasma treatment on the structural and optical properties of InGaN
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  32–35
7. Influence of source composition on the planar growth of nanowires during catalytic growth in a quasi-closed volume
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1082–1087
8. Specific features of structural stresses in InGaN/GaN nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  785–788
9. Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  621–624
10. Directional radiation from GaAs quantum dots in AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  47–50
11. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
12. Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  16–19
13. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
    
    Fizika Tverdogo Tela, 61:3 (2019),  433–440
14. Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1714–1717
15. The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  37–40
16. Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates
    
    Fizika Tverdogo Tela, 60:5 (2018),  851–856
17. The influence of polyvinylpyrrolidone molecular weight on the structure and the spectral and nonlinear optical properties of composite materials with CdS/ZnS nanoparticles
    
    Optics and Spectroscopy, 125:5 (2018),  608–614
18. Solar cell based on core/shell nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
19. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
20. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
21. Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1244–1249
22. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
23. GaAs wurtzite nanowires for hybrid piezoelectric solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  511
24. The features of GaAs nanowire SEM images
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  510
25. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
26. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
27. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
28. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
    
    Fizika Tverdogo Tela, 58:12 (2016),  2314–2318
29. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
30. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
31. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
32. The formation of ZnO-based coatings from solutions containing high-molecular polyvinylpyrrolidone
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  49–55
33. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
34. Growth specifics of GaAs nanowires in mesa
    
    Fizika Tverdogo Tela, 55:4 (2013),  645–649
35. Formation of structures with noncatalytic CdTe nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  865–868
36. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
37. Piezoelectric effect in GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1114–1116
38. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
39. Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002),  211–216