Publications in Math-Net.Ru
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High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163
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Surface polaritons in silicon-doped aluminum and gallium nitride films
Optics and Spectroscopy, 127:1 (2019), 42–45
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High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54
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MBE-grown AlGaN/GaN heterostructures for UV photodetectors
Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 67–73
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Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1329–1334
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Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix
Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 459–463
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