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ORGANISATIONS
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
Address:
Russia, 630090, Novosibirsk, Ac. Lavrentiev Ave, 13
Phone:
+7 (383) 333 27 66
Fax:
+7 (383) 333 27 71
E-mail:
email
Website:
https://www.isp.nsc.ru
Number of persons:
488
Number of authors:
574
Number of publications:
1213
Personnel:
A
B
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D
E
F
G
I
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M
N
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Full list
Bakarov Askhat Klimovich
Bakin Vasilii Veniaminovich
Baklanov Mikhail Rodionovich
Baksheev Dmitrii Georgievich
Balakirev Mikhail Konstantinovich
Balandin Vladimir Yuryevich
Basalaeva Lyudmila Sergeevna
Bashkatov Dmitrii Denisovich
Baskin Èmmanuil Moiseevich
Batsanov Stepan Anatol'evich
Baturina Tat'yana Ivanovna
Batyev Èduard Gazizovich
Bazhenov Aleksandr Olegovich
Bazovkin Vladimir Mikailovich
Belinicher Viktor Iosifovich
Bel'skaya Ekaterina Viktorovna
Beskrovnaya Elena Vladimirovna
Besman V B
Beterov Igor' Mendelevich
Beterov Il'ya Igorevich
Betleny Pavel Igorevich
Bezuglov Nikolai Nikolaevich
Biryukov M Yu
Blokh Miron Davidovich
Bloshkin Aleksey Aleksandrovich
Boev Maksim Vadimovich
Bogomolov Dmitry Borisovich
Bokhan Petr Artemovich
Bolkhovityanov Yurii Borisovich
Bortnikov Sergey Grigor'evich
Braginskii Leonid Semionovich
Briginets V A
Brunev Dmitrii Vladislavovich
Budamykh Viktor Ivanovich
Budantsev Maksim Vladimirovich
Burdastykh Mariya Vladimirovna
Bykov Aleksei Aleksandrovich
Divisions:
Design and Technology Institute for Applied Microelectronics, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Omsk Branch, Institute for Semiconductor Physics, Siberian Branch, RAS
Other institution names:
Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch
©
Steklov Math. Inst. of RAS
, 2026