Вычислительные методы и приложения

A special doping regime in silicon wafer nanocolumns

G. A. Tarnavskii

Institute of Computational Mathematics and Mathematical Geophysics (Computing Center), Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: Computer simulation for the ion implantation of impurities into silicon plate surface nanocolumns is conducted when the ion stream line is parallel to the plate base.

Keywords: computer simulation; doping in silicon; implantation; donor and acceptor impurities.

UDC: 519.2:541.1