The photoluminescence of nitrogen-implanted silicon nitride films

D. O. Murzalinov^a, L. A. Vlasukova^b, I. N. Parkhomenko^b, F. F. Komarov^b, А. Т. Akylbekov^c, A. V. Mudryi^d, Yu. A. Ryabikin^e, Sh. G. Giniyatova^c, А. К. Dauletbekova<sup>c

a</sup> Saken Seifullin Kazakh AgroTechnical University
^b Belarusian State University, Minsk
^c Eurasian National University named after L.N. Gumilyov, Nur-Sultan
^d Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus
^e Institute of Physics and Technology, Ministry of Education and Science of the Republic of Kazakhstan

Abstract: The photoluminescence and electron spin resonance of LPCVD silicon nitride films implanted with nitrogen ions and annealed at 800 and 1200 °C have been investigated. It was shown that rapid thermal annealing for 3 min at 800 °C results in decreasing photoluminescence signal from un-implanted film while the annealing temperature increase to 1200 °C leads to the enhanced blue-green emission. The PL is completely extinguished by nitrogen implantation due to radiation damage. However, the effect of increasing photoluminescence intensity at blue-green range after annealing at 1200 °C can be amplified by preliminary nitrogen implantation with 1*10 $^{16}$ $cм^{-2}$ fluence. It proves the contribution of amorphous silicon nitride intrinsic defects (N-centers) to the luminescence at the high-energy spectral range.

Received: 15.05.2017