Transport properties of semiconductor double quantum dots

A. O. Badrutdinov^a, Sh. M. Huang^b, K. Ono^b, K. Kono^ba, D. A. Tayurskii<sup>a

a</sup> Institute of Physics, Kazan (Volga region) Federal University
^b RIKEN – Institute for Physical and Chemical Research

Abstract: The results of energy spectrum investigations in GaAs vertical double quantum dot are presented. Specific feature of the investigated sample was a rather low value of the potential barriers between dots and leads, which caused strong tunneling coupling, increased overlapping of wave functions and low resistance. As the result it is expected that quantum transport through this double quantum dot should demonstrate some peculiarities.

Keywords: double quantum dot, quantum transport, Coulomb blockade, low temperatures.

UDC: 538.9(06)+539.2(06)

Received: 27.09.2010