Donor-acceptor pairs for optical cooling of semiconductors

S. V. Petrushkin

Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences, Kazan, Russia

Abstract: In this paper, we present the idea of controlling direct and indirect transitions in semiconductors under radiation of a coherent source of light. We suggest using impurity bands with donor-acceptor pairs in order to modify the density of electron-hole states. We discuss a simple laser-cooling regime for such doped semiconductor system.

Keywords: cooling, anti-Stokes, diagnostics, relaxation, semiconductors, temperature, nanoparticles.

UDC: 535.2

Received: 23.11.2012