Abstract:
The self-action effects of laser radiation in semiconductor media are considered in the paper. It is shown, that the nonlinearity saturation due to variation in free excess carrier concentration results in specific waveguide condition. The fundamental self-action parameters are calculated in the presence of linear absorption (gain). In particular, in real conditions for $A_3B_5$ semiconductors at the lengths of some $mm$ 20-times constriction is possible.
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