This article is cited in 6 papers

PHYSICS OF OUR DAYS

Some physical aspects of ion implantation

V. S. Vavilov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

Abstract: Ion implantation and related processes of deposition and sputtering. – The nonequilibrium and metastable nature of ion-implanted structures. – Amorphous solids produced by ion implantation and planar structures that include them. – Recrystallization of layers doped or (and) amortised by ion implantation. – Analysis of the composition and properties of ion-implanted planar structures. – Method of analyzing spectra of photo- and cathodoluminescence of ion-implanted layers. – Optical methods for the study of near-surface layers of ion-implanted structures. – Capacitive spectroscopy of energy levels. – Limits of applicability of ion implantation as a method of controlling properties of semiconductors and other solids.

UDC: 541.132

PACS: 81.15.Cd, 68.55.Ln, 68.55.Nq, 78.55.-m, 78.60.Hk, 78.66.Jg

DOI: 10.3367/UFNr.0145.198502e.0329

 English version: Physics–Uspekhi, 1985, 28:2, 196–206