This article is cited in 32 papers

REVIEWS OF TOPICAL PROBLEMS

Structure of silicon/oxide and nitride/oxide interfaces

V. A. Gritsenko

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences

Abstract: Silicon/dielectric (Si/SiO$_2$,Si/SiO$_x$N$_y$) and dielectric/dielectric (Si$_3$N$_4$/SiO$_2$) interfaces that are at the heart of modern silicon technology are reviewed for what is currently known about their electronic structure.

PACS: 61.43.-j, 61.66.Fn, 68.35.Dv, 71.55.Jv

Received: October 21, 2008
Revised: April 17, 2009

DOI: 10.3367/UFNr.0179.200909a.0921

 English version: Physics–Uspekhi, 2009, 52:9, 869–877

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