This article is cited in 12 papers

REVIEWS OF TOPICAL PROBLEMS

Tunneling features in semiconductor nanostructures

P. I. Arseev^ab, V. N. Mantsevich^c, N. S. Maslova^c, V. I. Panov<sup>c

a</sup> Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b National Research University "Higher School of Economics" (HSE), Moscow
^c Lomonosov Moscow State University

Abstract: The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently accounting for nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of the self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained and new phenomena to be predicted.

Keywords: tunneling, scanning tunneling microscopy/spectroscopy, localized states, Keldysh diagram technique, nonequilibrium processes, interparticle interaction.

PACS: 05.60.Gg, 68.37.Ef, 73.40.Gk, 73.63.-b

Received: December 12, 2016
Accepted: January 28, 2017

DOI: 10.3367/UFNr.2017.01.038055

 English version: Physics–Uspekhi, 2017, 60:11, 1067–1086

Bibliographic databases:

• 
• 
• 
•