This article is cited in 1 paper

NOBEL LECTURES IN PHYSICS — 2014

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

H. Amano

Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University, Japan

Abstract: Nobel lecture, December 8, 2014

PACS: 42.72.Bj, 81.10.-h, 85.60.Dw

Received: December 2, 2015
Accepted: December 8, 2014

DOI: 10.3367/UFNr.2014.12.037745

 English version: DOI: 10.3367/UFNe.2014.12.037745

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