Abstract:
Studies îf thå electron instability effects (EIEs) in structures based în strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in à change îf several orders îf magnitude in thå resistive state îf the normal metal–HTSC or normal metal–DM (doped manganite) interface in àn electric field under significant current injection conditioïs. Òhå results îf studying HTSC- and doped-manganite-based heterojunctioïs are considered. EIEs in heterostructures are compared with the electric field effect on the properties îf àn SCES in thin fllms and gate-containing devices. Òhå general features and distinctions in the physics îf these ðhenomena are analyzed.