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Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductors

L. I. Ryabova^a, D. R. Khokhlov<sup>bc

a</sup> Faculty of Chemistry, Lomonosov Moscow State University
^b Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c Faculty of Physics, Lomonosov Moscow State University

Abstract: This paper reviews unusual photoelectric effects observed in doped narrow-gap PbTe-based semiconductors exposed to intense terahertz laser pulses. It is shown that in some cases these effects are due to those (nontrivial) local electronic states that, unlike ordinary, spectrally defined impurity states, are linked to the quasi-Fermi level, whose position can be varied by changing the degree of photoexcitation.

Keywords: photoconductivity, terahertz radiation, semiconductors, local electron states.

PACS: 72.40.+w, 73.20.Hb

Received: January 15, 2014
Revised: February 8, 2014
Accepted: February 11, 2014

DOI: 10.3367/UFNr.0184.201410b.1033

 English version: Physics–Uspekhi, 2014, 57:10, 959–969

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