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UFN, 1999 Volume 169, Number 7, Pages 737–751 (Mi ufn1630)

This article is cited in 23 papers

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Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors

A. S. Borukhovich

Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg

Abstract: Experimental data promising exciting possibilities for quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors are comprehensively surveyed for the first time. The practical utilization of two- or singleparticle tunneling in such structures gives impetus to the tunneling spectroscopy of ferromagnetically ordered materials and, based on spin filtering, magnetic-field-shaped volt-ampere characteristics, and some other salient features of such structures, paves the way to a new generation of unconventional solid-state micromagnetoelectronic cryogenic devices, including those operated in millimeter or submillimeter wavelength ranges.

PACS: 73.40.-c, 74.50.+r, 74.80.-g, 75.50.Dd

Received: September 3, 1998

DOI: 10.3367/UFNr.0169.199907b.0737


 English version:
Physics–Uspekhi, 1999, 42:7, 653–667

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