Abstract:
The results of studies of monatomic steps on silicon surfaces using in situ ultrahigh vacuum reflection electron microscopy are reviewed. The topics covered include the increase in dynamic step edge stiffness under non-equilibrium conditions; step bunch and step antibunch formation processes; electromigration effects; the anomalously high density of Si(111) adatoms; and incipient epitaxial growth.
Fulltext:
PDF file (2759 kB)
