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UFN, 2005 Volume 175, Number 2, Pages 139–161 (Mi ufn146)

This article is cited in 106 papers

REVIEWS OF TOPICAL PROBLEMS

Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems

A. A. Shashkin

Institute of Solid State Physics, Russian Academy of Sciences

Abstract: Experimental results on metal–insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.

PACS: 71.30.+h, 73.40.Qv, 73.43.-f

Received: June 16, 2004
Revised: October 18, 2004

DOI: 10.3367/UFNr.0175.200502b.0139


 English version:
Physics–Uspekhi, 2005, 48:2, 129–149

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© Steklov Math. Inst. of RAS, 2026