This article is cited in 22 papers

REVIEWS OF TOPICAL PROBLEMS

Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors

V. S. Vavilov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Exciting the electronic subsystem of a semiconductor via photoionization or ionization by charged particles, or, alternatively, injecting nonequilibrium charge carriers into a semiconductor stimulates atomic migration, generates new structural defects, and modifies the nature of those present. These effects change the major electrical and physical parameters of semiconductors, in particular of those crucial for modern solid-state electronics. Current data on the subject are presented and discussed.

PACS: 66.30.Fq, 66.30.Lw, 66.90.r, 78.50.Ge

Received: March 1, 1997

DOI: 10.3367/UFNr.0167.199704c.0407

 English version: Physics–Uspekhi, 1997, 40:4, 387–392

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