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JOURNALS // Teplofizika vysokikh temperatur // Archive

TVT, 2008 Volume 46, Issue 5, Pages 786–788 (Mi tvt1146)

This article is cited in 3 papers

Short Communications

Condition of formation of 2D Coulomb crystal on the surface of dielectric

L. A. Zhylyakova, A. V. Kostanovskiia, G. P. Pokhilb

a Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
b Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

Abstract: This study deals with the distribution of point charges on the surface of a uniformly charged dielectric plate; the expression for the criterion of formation of 2D Coulomb crystal is obtained. This criterion is independent of the charge surface density and is defined only by the temperature of dielectric surface. At room temperature, the aggregate of point charges on dielectric surface may be considered as 2D Coulomb crystal.

UDC: 537.213

PACS: 73.20.-r

Received: 30.10.2007


 English version:
High Temperature, 2008, 46:5, 721–724

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