Quasi-Relativism, the Narrow-Gap Property, and Forced Electron Dynamics in Solids

B. S. Pavlov^ab, A. A. Pokrovski^a, A. V. Strepetov<sup>c

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b University of Auckland
^c Saint-Petersburg State University of Aerospace Instrumentation

Abstract: Narrow-gap semiconductors, used in quantum network engineering, are characterized by small effective electron masses on the Fermi level and hence by high electron mobility in the lattice. We construct an explicitly solvable model that clarifies one possible mechanism for small effective masses to appear. Another mathematical model constructed here describes a possible mechanism for using a traveling wave to control an alternating quantum current in a one-dimensional lattice.

DOI: 10.4213/tmf1951

 English version: Theoretical and Mathematical Physics, 2002, 131:1, 506–515

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