This article is cited in 10 papers

Chemical vapour-phase deposition of ruthenium-containing thin films

V. Yu. Vasilev^ab, N. B. Morozova^c, I. K. Igumenov<sup>c

a</sup> Novosibirsk State Technical University
^b 'SibIS', Limited Liability Company, Novosibirsk, Russia
^c Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: Chemical and materials science aspects of formation of ruthenium-containing thin films for modern high-precision technologies by chemical vapour deposition (CVD) methods are considered. Chemical approaches to the synthesis of main precursors used in MOCVD techniques, layer growth processes as well as main physicochemical and electrical properties of ruthenium-containing thin films are analyzed.
Bibliography — 120 references.

Received: 24.04.2013

DOI: 10.1070/RC2014v083n08ABEH004402

 English version: Russian Chemical Reviews, 2014, 83:8, 758–782

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