This article is cited in 8 papers

Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

V. N. Vertoprakhov, L. D. Nikulina, I. K. Igumenov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10–15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

Received: 19.03.2004

DOI: 10.1070/RC2005v074n08ABEH000924

 English version: Russian Chemical Reviews, 2005, 74:8, 725–746

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