This article is cited in 2 papers

Kinetics and Mechanism of the Dissolution and Oxidation of Semiconductors

S. M. Repinsky

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

Abstract: A generalised kinetic approach to the description of the dissolution of semiconductors (including the thermal oxidation of silicon and germanium) is based on a statistical thermodynamic analysis of the adsorption steps, and on an analysis of the structure of the activated complex and of the effects of solvation of the intermediate and the final products (calculated from model descriptions). 66 references.

UDC: 537.311.33+541.183

DOI: 10.1070/RC1983v052n06ABEH002860

 English version: Russian Chemical Reviews, 1983, 52:6, 524–531

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