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Usp. Khim., 1968 Volume 37, Issue 9, Pages 1685–1693 (Mi rcr2207)

The "Memory" Effect in Semiconductor Adsorbents and Catalysts during Radiation

F. F. Vol'kenshteina, V. G. Barub

a Institute of Physical Chemistry, the USSR Academy of Sciences, Moscow
b Institute of Radio Engineering and Electronics, Academy of Sciences of the USSR

Abstract: CONTENTS
I. The "memory" effect under various forms of irradiation 724
II. "Memory" associated with a shift in the electronic equilibrium 725
III. "Memory" associated with a disturbance of the electronic equilibrium 726


UDC: 541.128:537.311.33

DOI: 10.1070/RC1968v037n09ABEH001697


 English version:
Russian Chemical Reviews, 1968, 37:9, 724–728


© Steklov Math. Inst. of RAS, 2026