This article is cited in 1 paper

Method for increasing information capacity of optoelectronic memories

V. B. Fedorov, V. N. Mitsai


Abstract: An analysis is made of a method for increasing the information capacity of bit-organized optoelectronic memories. This method involves the use of multiple splitting of light beams as well as image multiplication and transfer in an optical system, and it makes it possible to increase the capacity of random-access optoelectronic memories up to $10^{11}$ bit or more.

UDC: 681.327.2:535

PACS: 42.30.Nt

Received: 09.07.1979
Revised: 20.09.1979

 English version: Soviet Journal of Quantum Electronics, 1980, 10:3, 288–294

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