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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1987 Volume 14, Number 9, Pages 1854–1856 (Mi qe9885)

This article is cited in 1 paper

Nonlinear optical effects and devices

Four-level logic element based on optical bistabiiity in an uncooled thin-film semiconductor interferometer

A. A. Bakiev, A. L. Velikovich, G. P. Golubev, D. G. Luchinskiĭ


Abstract: An experimental investigation was made of an optical bistabiiity of layer ε-GaSe single crystals of thickness 0.9 µ in optical contact with a dielectric mirror. Excitation with argon laser radiation λ = 514.5 nm, focal spot diameter 60 µ, excitation power up to 80 mW) under static and dynamic conditions induced up to three consecutive optical hysteresis loops demonstrating the feasibility of operation of a thin-film bistable element as a four-level logic device.

UDC: 681.325.65:531.715.1

PACS: 42.65.Pc, 42.70.Mp, 42.79.Ta, 42.79.Bh

Received: 12.01.1987


 English version:
Soviet Journal of Quantum Electronics, 1987, 17:9, 1182–1183

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