This article is cited in 4 papers

Letters to the editor

New method for passive Q switching of an injection laser with an ultrashort absorber recovery time

P. P. Vasil'ev, I. S. Goldobin


Abstract: A new modification of the method of passive Q switching in a semiconductor laser with an isotypic saturable absorber was proposed and implemented. An increase in the power and repetition frequency of ultrashort pulses and a reduction of their duration were achieved by transferring a major fraction of excited carriers from the absorber to an amplifier with the aid of an electric field. Ultrashort pulses of 5 psec duration with a repetition frequency in excess of 18 GHz and a peak power in excess of 10 W (power density 4×10⁸ W/cm² in the active medium) were generated in a multicomponent AlGaAs/GaAs injection heterolaser.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Gd, 42.65.Re, 42.50.Gy

Received: 01.04.1987

 English version: Soviet Journal of Quantum Electronics, 1987, 17:7, 835–836

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