This article is cited in 1 paper

Interaction of laser radiation with matter

Changes in the reflectivity and photoacoustic effect in semiconductors subjected to nanosecond laser pulses

I. V. Veselovskiĭ, B. M. Zhiryakov, A. A. Samokhin


Abstract: A qualitative difference was observed in the behavior of photoacoustic signals when germanium and silicon were melted by laser pulses of 20 nsec duration and 1.06 µ wavelength. After increase of the reflectivity a photoacoutic pressure pulse in germanium exhibited a strong dip, whereas in the case of silicon there was no such transformation of the photoacoustic signal.

UDC: 535.211:536.4

PACS: 61.80.Ba, 61.82.Fk, 78.20.Hp, 78.20.Ci

Received: 30.12.1986

 English version: Soviet Journal of Quantum Electronics, 1987, 17:6, 750–751

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