This article is cited in 2 papers

Lasers

Influence of spatially inhomogeneous gain saturation, caused by a standing wave, on the amplitude — frequency modulation characteristic of semiconductor laser radiation

A. P. Bogatov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The framework of linearised laser equations for the field and charge carriers is used to obtain an analytic expression which describes the modulation response function of a semiconductor laser and takes account of spatially inhomogeneous gain saturation caused by a standing wave. Account is also taken of spatial variations of the carrier density along the cavity axis, which appear because of different rates of stimulated recombination near the standing-wave nodes and antinodes, and because of ‘expulsion’ of free carriers from the wave antinodes by electrostriction forces. It is shown that the influence of the standing wave leads to a change in the response function near a resonant frequency f₀ and has a minor effect on the value of this function at frequencies exceeding f₀. Therefore, this influence has practically no effect on the maximum modulation frequency f_m of a semiconductor laser.

PACS: 42.55.Px, 42.60.Fc

Received: 08.08.1996

 English version: Quantum Electronics, 1997, 27:4, 285–289

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