RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1979 Volume 6, Number 5, Pages 1109–1111 (Mi qe9088)

Brief Communications

Degradation of uncooled electron-pumped gallium arsenide lasers

E. M. Krasavina, I. V. Kryukova


Abstract: An investigation was made of the degradation of electron-pumped gallium arsenide lasers operating at room temperature. One of the reasons for the degradation of these uncooled lasers was (in contrast to the cooled devices) an increase in the density of dislocations in the active region of a crystal because of the greater plasticity at higher temperatures.

UDC: 621.378.325

PACS: 42.55.Px, 61.70.Jc

Received: 01.08.1978


 English version:
Soviet Journal of Quantum Electronics, 1979, 9:5, 656–657


© Steklov Math. Inst. of RAS, 2026