Abstract:
An investigation was made of the causes of degradation of the active elements of sealed semiconductor GaAs lasers pumped transversely by electron beam pulses. Tests involving application of 5×106 pulses under the usual pumping conditions indicated that the main factor which reduced the output radiation power was the optical self-damage of some parts of the laser crystal because of the pump inhomogeneities. Accelerated tests at the frequency 3 kHz involving application of up to 5×107 pulses revealed fatigue damage to the active region of the laser crystal as a result of cyclic interaction with the electron beam and with the radiation emitted by the laser itself.