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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1986 Volume 13, Number 12, Pages 2529–2531 (Mi qe8532)

Brief Communications

Investigation of the degradation of sealed electron-beam-pumped semiconductor lasers

A. A. Burov, E. M. Krasavina, I. V. Kryukova, G. V. Rodichenko


Abstract: An investigation was made of the causes of degradation of the active elements of sealed semiconductor GaAs lasers pumped transversely by electron beam pulses. Tests involving application of 5×106 pulses under the usual pumping conditions indicated that the main factor which reduced the output radiation power was the optical self-damage of some parts of the laser crystal because of the pump inhomogeneities. Accelerated tests at the frequency 3 kHz involving application of up to 5×107 pulses revealed fatigue damage to the active region of the laser crystal as a result of cyclic interaction with the electron beam and with the radiation emitted by the laser itself.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.88.+h, 42.70.Hj, 42.60.Da

Received: 14.03.1986


 English version:
Soviet Journal of Quantum Electronics, 1986, 16:12, 1672–1674

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© Steklov Math. Inst. of RAS, 2026