Abstract:
Experimental and numerical investigations were made of two-photon absorption of 3-μm erbium laser radiation by an n-type GaSb crystal. Experimental values of the two-photon absorption coefficient K2 ≈ 0.38 cm MW–1 and of the free-carrier absorption cross section σ ≈ 2×10–17 cm–2 were used in numerical simulation of optical saturation of the transmission of radiation by the semiconductor.