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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1996 Volume 23, Number 9, Pages 773–774 (Mi qe771)

This article is cited in 1 paper

Letters to the editor

New Nd3+:BaLu2F8 laser crystal

A. A. Kaminskiia, A. V. Butashina, S. N. Bagayevb

a Institute of Cristallography Russian Academy of Sciences, Moscow
b Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

Abstract: A new Nd3+:BaLu2F8 laser crystal was grown. It is capable of low-threshold pulsed lasing (4F3/2 → 4I11/2 channel) at 300 K under flashlamp pumping. Preliminary results are reported of a study of the spectral and luminescence characteristics of this crystal and of the excitation of low-threshold lasing on two inter-Stark transitions in the 4F3/2 → 4I11/2 channel of the Nd3+ ions.

PACS: 42.70.Hj, 42.55.Rz

Received: 01.01.1996


 English version:
Quantum Electronics, 1996, 26:9, 753–754

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