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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1990 Volume 17, Number 11, Pages 1418–1423 (Mi qe7496)

This article is cited in 3 papers

Lasers

Stimulated emission mechanisms of a λ = 585.3 nm gas-discharge neon–hydrogen laser

E. L. Latush, M. F. Sèm, G. D. Chebotarev


Abstract: An investigation was made of the mechanisms of pulsed lasing due to the 585.3 nm NeI transition in an Ne–H2 mixture in hollow-cathode and longitudinal discharges. It was established that lasing in the afterglow of both types of discharge was due to pumping of the upper active level mainly by three-body recombination of neon ions, whereas lasing during a current pulse in a hollow-cathode discharge was due to electron impact pumping. It was found that, in a longitudinal discharge at high currents, a recombination nonequilibrium state could form even during passage of the current and then lasing during a current pulse was due to recombination pumping. It was established that the depopulation of the lower active level as a result of the Penning reaction with hydrogen was selective. It was found that elastic collisions with electrons had a strong influence on the temporal characteristics of the lasing in a recombining plasma.

UDC: 621.373.826.038.823

PACS: 42.55.Lt, 42.60.Jf, 52.80.Sm

Received: 26.01.1990


 English version:
Soviet Journal of Quantum Electronics, 1990, 20:11, 1327–1331

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© Steklov Math. Inst. of RAS, 2026